π¬ 01_Semiconductor | Article Index
π Device Physics & Structures (up to Post-CFET)
This section organizes MOS device structures from the viewpoint of
short-channel effects, electrostatic control, and scaling constraints.
The focus is on why structural changes became necessary, not on generational comparisons.
- 01. Planar SCE Problem β Short-Channel Effects in Planar MOSFETs
- 02. FinFET Structure β FinFET Architecture and Electrical Characteristics
- 03. Weff Concept β Effective Channel Width (Weff)
- 04. GAA Structure β Gate-All-Around (GAA) Devices
- 05. CFET Challenge β Technical Challenges of CFET
- 06. Post-CFET β The Essence of the Post-CFET Era (Beyond Devices)
π Design Methodology & Abstraction
This section addresses how physical constraints are handled across design layers.
It clarifies the roles and assumptions of device-, circuit-, and system-level abstraction.
π Design, Modeling, and EDA
In this section,
we organize the models, parameters, and EDA assumptions used in semiconductor design.
The scope represented by each model and the scope not represented are clearly defined.
- 08. SemiDevKit DevKit Concept for Semiconductor Design
- 08-01. SemiDevKit Overview
- 08-02. TCAD (Poisson / DriftβDiffusion)
- 08-03. Fundamentals of the BSIM4 Compact Model
- 08-04. BSIM4 Model Generation Using Paramus
- 08-05. BSIM4 DC Analysis (VβI)
- 08-06. BSIM4 AC / CV Analysis
- 08-07. MOSFET Scaling and Short-Channel Effects
- 08-08. Fundamentals of NBTI Reliability
- 08-09. Fundamentals of HCI Reliability
π OpenLane / RTL β GDS Flow
This section describes a practical RTL-to-GDS flow using open-source EDA tools.
Automated steps and steps requiring explicit design decisions are treated separately.
- 09. OpenLane Minimal Flow β Pre-Declared Minimal RTL β GDS Flow
- 10. OpenLane Control ASIC β RTL-to-GDS Design of a Control ASIC
- 11. OpenLane2 SRAM Hard Macro β Integrating SRAM Hard Macros with OpenLane2
- 12. OpenLane1 Setup β OpenLane v1 Environment Setup
- 13. OpenLane2 Setup β OpenLane v2 Environment Setup
- 14. OpenLane PDK β PDK Structure and Compatibility with OpenLane
π§ OpenLane: Design Philosophy, Reality, and Operations (Phase 1β3 + Appendix)
This section focuses on the conceptual foundation required to use the above flow without breaking it.
It organizes the causal relationship between Environment β Physical Design β Timing β Operations.
- 23. OpenLane Is 90% About the Environment / Environment Survival
- 24. Automation Is Not Magic / Physical Design Reality
- 25. Does STA Lie? / Integration & Timing Truth
- 26. How to Use OpenLane Without Breaking It / Operational Rules & Appendix
π§± Legacy Technology | Failure and Engineering Decisions
This section records actual product cases from the late 1990s to early 2000s, focusing on:
- Observed failure phenomena
- Corresponding physical mechanisms
- Limits of yield recovery
- Decisions to continue or terminate development
The purpose is documentation, not reuse in current manufacturing.
- 15. What Is Legacy Technology? β Failures from the Era Ruled by Physics
- 16. Pause Refresh Anomalies in 0.25 Β΅m DRAM β Observed Phenomena
- 17. Physical Origin of Pause Refresh Failures in 0.25 Β΅m DRAM
- 18. What Was PSRAM Intended to Achieve? β The Premise of Reusing DRAM
- 19. What Happened to PSRAM, and Why Did It End? β Pause Γ Disturb
π§ͺ Test, Quality, and Failure Analysis
This section covers mass-production quality control, including
process monitoring, product screening, and root-cause investigation.
The entire quality loop is organized along the flow: ETEST β WAT β FA.
- 20. What Is ETEST? β An Evaluation Process for Quantitative Monitoring of Process Variations
- 21. Why Is Wafer Testing the βLast Line of Defenseβ? β A Screening Process for Defective Dies
- 22. What Does Failure Analysis (FA) Decide? β Determining Corrective Targets
π How to Read This Series
-
π Device physics and design assumptions
β 01 β 06 β 07 β 08
(From the physical background of Planar / FinFET / GAA / CFET
to design assumptions established by SystemDK and SemiDevKit) -
π EDA and implementation flow
β 08-01 β 08-03 β 08-05 β 00 β 12 β 09 β 10 β 11 β 13 β 14
(Following the RTL-to-GDS flow based on modeling and VβI assumptions) -
π§± Product failures and engineering decisions
β 15 β 16 β 17 β 18 β 19
(Fact-based records of observed failures and decision-making in legacy technologies) -
π§ͺ Quality control and decision flow in mass production
β 20 β 21 β 22
(Process monitoring with ETEST, screening by wafer testing,
and root-cause determination and corrective decisions through FA) -
π§ If You Want to Use OpenLane Without Breaking It (Design Philosophy, Reality, and Operations)
β 23 β 24 β 25 β 26
(Environment setup β Limits of physical design β Timing truth β Operations and reproducibility)
π― Scope of This Series
- Semiconductor device physics
- Design methodology and abstraction
- EDA flows
- Product-level failures and decisions (Legacy)
The following are out of scope:
- Detailed conditions of current mass-production processes
- Reproducible manufacturing recipes
- Company-specific confidential information
π Closing
This index serves as an entry point for cross-referencing semiconductor technology
from multiple perspectives: physics, design methodology, tools, and real products.