TCAD_PLAYGROUND

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A lightweight Python-based TCAD playground for MOSFET, MOSCAP, and 1D Poisson simulations.
Designed for education and visualization of semiconductor device physics in VSCode.

📁 Directory

tcad_playground/
├── fig/
│   ├── mosfet_vdid_*         # MOSFET Vd–Id
│   ├── mosfet_vgid_*         # MOSFET Vg–Id
│   ├── moscap_cv_*           # MOSCAP C–V
│   └── ...
├── moscap_cv_*.py            # MOSCAP CV scripts
├── mosfet_vdid_*.py          # MOSFET Vd–Id scripts
├── mosfet_vgid_*.py          # MOSFET Vg–Id scripts
├── poisson_1d.py             # 1D Poisson solver
└── poisson_moscap_1d.py      # Poisson-based MOSCAP

🔧 Requirements

Python 3.10+
Install packages:

pip install numpy scipy matplotlib

📊 Example Results from the TCAD Playground

The TCAD Playground provides lightweight 1D semiconductor simulations useful for
understanding MOS capacitor behavior, threshold voltage trends, and MOSFET I–V characteristics.

Below are example outputs generated by the scripts in tcad_playground/.

▶ MOSCAP C–V characteristics (tox sweep)

This plot shows how oxide thickness (tox) affects the MOS capacitor C–V curve
— thinner oxide increases capacitance in accumulation/inversion.

▶ nMOS Vg–Id characteristics (tox sweep, linear region)

Sweeping the oxide thickness demonstrates its impact on threshold voltage and drive current.

▶ nMOS Vd–Id characteristics (tox sweep)

This plot illustrates output characteristics of an nMOSFET under different oxide thicknesses
in the linear-to-saturation transition.

🧩 Sample: Key Equations Used (Educational Model)

# Threshold voltage (toy model)
Vth = Vfb + 2*phi_f + np.sqrt(2*eps_si*q*Na*2*phi_f) / Cox

# Mobility model (temperature dependence)
mu = mu_0 * (300 / T)**1.5

These simplified equations are used for educational purposes.

🎯 Future Work

• BSIM-like compact modeling
• 2D Poisson / Drift–Diffusion
• Jupyter Notebook version
• Device optimization toolkit

👤 Author

📄 License