🧪 0.18μm CMOS Logic Process Flow (with Co Salicide & Metal-3)
⚠️ Caution
⚠️ Caution: This process flow is a memory-based reference model
The 0.18μm CMOS logic process flow presented here has been reconstructed based on the author’s past experience and recollection.
The sequence, processing conditions, and dimensions may not fully reflect actual manufacturing specifications, and accuracy is not guaranteed.
Please use this content with appropriate discretion and technical judgment.
- Substrate Spec: Si(100), P-type, 10 Ω·cm
- Key Features:
- Shallow Trench Isolation (STI)
- Well doping for VT adjustment
- Co-based self-aligned silicide (Co Salicide)
- Triple-layer Al interconnect (Metal-1 to Metal-3: ALA–ALC)
- Ti/TiN barrier with W plugs (3-level via stack)
- Final pad structure, passivation, and hydrogen sintering
- Application: Standard CMOS logic LSI (for core and peripheral integration)
📋 Process Table
| Step Name | Process Description | Category | Purpose | Condition | CD | Thickness | Mask |
|---|---|---|---|---|---|---|---|
| FS-DP | SiON protection film deposition | General | Interface protection | 200Å @ 700℃ | - | - | - |
| FSN-DP | Oxidation barrier nitride for STI | Field | Field oxidation cap | 1500Å @ 750℃ | - | - | - |
| F-PH | Photolithography (mask exposure) | Field | STI pattern definition | - | 0.28μm | - | F |
| F-ET | Etching (RIE etc.) | Field | STI pattern transfer | - | 0.28μm | - | - |
| F-DP | STI oxide trench fill | Field | Shallow trench fill | - | - | 4000Å | - |
| F-CMP | STI CMP planarization | Field | Planarization | - | - | - | - |
| PRE-OX | Sacrificial oxide formation | Pre-treatment | Surface conditioning and contamination capture before implantation | Dry OX, ~80Å | - | 80Å | - |
| NWL-PH | Photolithography (Mask Exposure) | Well | Patterning of N-Well region | - | - | - | NWL |
| NWL-ION | Ion Implantation | Well | Formation of N-Well | 800 keV, 2E13 cm⁻² | - | - | - |
| PWL-PH | Photolithography (Mask Exposure) | Well | Patterning of P-Well region | - | - | - | PWL |
| PWL-ION | Ion Implantation | Well | Formation of P-Well | 200 keV, 5E12 cm⁻² | - | - | - |
| NCD-PH | Photolithography (Mask Exposure) | CD | Patterning of NMOS channel region | - | - | - | NCD |
| NCD-ION | Ion Implantation (Channel Doping) | CD | Threshold voltage adjustment for NMOS | Boron, 50 keV, 1E13 cm⁻² | - | - | - |
| PCD-PH | Photolithography (Mask Exposure) | CD | Patterning of PMOS channel region | - | - | - | PCD |
| PCD-ION | Ion Implantation (Channel Doping) | CD | Threshold voltage adjustment for PMOS | BF₂, 30 keV, 1E13 cm⁻² | - | - | - |
| G-OX | Gate oxide formation | Gate | Channel oxide (EOT control) | Dry OX, EOT=35Å | - | 35Å | - |
| PLY-DP | Poly-Si gate deposition | Gate | Gate electrode formation | LPCVD | - | 1500Å | - |
| PLY-PH | Photolithography | Gate | Poly gate resist patterning | KrF | 0.18μm | - | PLY |
| PLY-ET | Poly gate etching | Gate | Gate structure definition | RIE | 0.18μm | - | - |
| NLD-PH | Photolithography | S/D | NMOS LDD mask | KrF | 0.18μm | - | NLD |
| NLD-ION | Ion implantation | S/D | NMOS LDD doping | As, 30keV, 1E13 | - | - | - |
| PLD-PH | Photolithography | S/D | PMOS LDD mask | KrF | 0.18μm | - | PLD |
| PLD-ION | Ion implantation | S/D | PMOS LDD doping | BF₂, 30keV, 1E13 | - | - | - |
| SW-DP | Spacer deposition (SiN) | Gate | LDD spacer | LPCVD | - | 800Å | - |
| SW-ET | Spacer etching | Gate | Spacer patterning | RIE | - | - | - |
| NLD2-PH | Photolithography | S/D | NMOS 2nd LDD mask | KrF | 0.22μm | - | NLD2 |
| NLD2-ION | Ion implantation | S/D | NMOS deep S/D extension | As, 40keV, 1E13 | - | - | - |
| PLD2-PH | Photolithography | S/D | PMOS 2nd LDD mask | KrF | 0.22μm | - | PLD2 |
| PLD2-ION | Ion implantation | S/D | PMOS deep S/D extension | BF₂, 40keV, 1E13 | - | - | - |
| CO-SP | Co sputtering | Salicide | Precursor deposition | - | - | 300Å | - |
| LMP-ANL | Salicide anneal | Salicide | CoSi formation | 550℃, 30s | - | - | - |
| CO-ET | Selective Co etch | Salicide | Residual removal | H₂SO₄-based | - | - | - |
| LMP2-ANL | Phase transformation anneal | Salicide | CoSi₂ formation | 750℃, 30s | - | - | - |
| F2-DP | ILD deposition | ILD | Inter-metal insulation | PE-TEOS | - | 6000Å | - |
| F2-CMP | ILD CMP | CMP | Planarization | CMP | - | - | - |
| CNT-PH | Photolithography | Via | Via-1 patterning | - | 0.24μm | - | CNT |
| CNT-ET | Etching | Via | Via-1 transfer | - | 0.24μm | - | - |
| TIN-SP | Ti/TiN barrier deposition | Via | Barrier formation | 300Å | - | 300Å | - |
| CW-DP | W plug fill | Plug | Via-1 fill | - | - | 5000Å | - |
| CW-CMP | W CMP | Plug | Planarization | CMP | - | - | - |
| ALA-SP | Al deposition (Metal-1) | Interconnect | Local routing | - | - | 6000Å | - |
| ALA-PH | Photolithography | Interconnect | Metal-1 pattern | - | 0.28μm | - | ALA |
| ALA-ET | Etching | Interconnect | Metal-1 transfer | - | 0.28μm | - | - |
| HLA-DP | ILD-1 deposition | ILD | Above Metal-1 | PE-TEOS | - | 6000Å | - |
| HLA-PH | Photolithography | ILD | Via-2 patterning | RIE + litho | 0.24μm | - | HLA |
| HLA-ET | Etching | ILD | Via-2 transfer | RIE + litho | 0.24μm | - | - |
| TINA-SP | Ti/TiN barrier | Barrier | Via-2 barrier | 300Å | - | 300Å | - |
| HWA-DP | W plug fill (Via-2) | Plug | Metal-2 contact | W-CVD | - | 5000Å | - |
| HWA-CMP | W CMP (Via-2) | Plug | Planarization | CMP | - | - | - |
| ALB-SP | Al deposition (Metal-2) | Interconnect | Intermediate metal | - | - | 6000Å | - |
| ALB-PH | Photolithography | Interconnect | Metal-2 pattern | - | 0.35μm | - | ALB |
| ALB-ET | Etching | Interconnect | Metal-2 transfer | - | 0.35μm | - | - |
| HLB-DP | ILD-2 deposition | ILD | Above Metal-2 | PE-TEOS | - | 6000Å | - |
| HLB-PH | Photolithography | ILD | Via-3 patterning | RIE + litho | 0.28μm | - | HLB |
| HLB-ET | Etching | ILD | Via-3 transfer | RIE + litho | 0.28μm | - | - |
| TINB-SP | Ti/TiN barrier | Barrier | Via-3 barrier | 300Å | - | 300Å | - |
| HWB-DP | W plug fill (Via-3) | Plug | Metal-3 contact | W-CVD | - | 5000Å | - |
| HWB-CMP | W CMP (Via-3) | Plug | Planarization | CMP | - | - | - |
| ALC-SP | Al deposition (Metal-3) | Interconnect | Global routing | - | - | 8000Å | - |
| ALC-PH | Photolithography | Interconnect | Metal-3 pattern | - | 0.5μm | - | ALC |
| ALC-ET | Etching | Interconnect | Metal-3 transfer | - | 0.5μm | - | - |
| HLC-DP | ILD-3 deposition | ILD | Above Metal-3 | PE-TEOS | - | 6000Å | - |
| HLC-PH | Photolithography | ILD | Pad via patterning | RIE + litho | 0.35μm | - | HLC |
| HLC-ET | Etching | ILD | Pad via transfer | RIE + litho | 0.35μm | - | - |
| TINC-SP | Ti/TiN barrier | Barrier | Pad via barrier | 300Å | - | 300Å | - |
| HWC-DP | W plug fill (Pad via) | Plug | Pad contact | W-CVD | - | 5000Å | - |
| HWC-CMP | W CMP (Pad via) | Plug | Planarization | CMP | - | - | - |
| ALD-SP | Al deposition (Pad) | Pad | Bond pad formation | - | - | 10000Å | - |
| ALD-PH | Photolithography | Pad | Pad pattern | - | 3.0μm | - | PAD |
| ALD-ET | Etching | Pad | Pad transfer | - | 3.0μm | - | - |
| PAD-DP | Passivation deposition | Protection | Surface/environmental protection | SiN+SiO₂ | - | 8000Å | - |
| PAD-PH | Photolithography | Protection | Opening pattern | - | 3.0μm | - | PAD |
| PAD-ET | Etching | Protection | Final pad opening | - | 3.0μm | - | - |
| AL-SNT | Hydrogen sintering | Surface treatment | Al oxide reduction / interface stabilization | H₂/N₂, 420℃, 30min | - | - | - |
| E-TEST | Electrical test | Test | Vth, Ioff measurement | Automatic tester | - | - | - |
📸 0.18μm CMOS Photolithography Exposure Map (English Version)
This document summarizes the photolithography conditions (equipment, reduction ratio, wavelength) for each mask layer in a 0.18μm CMOS logic process.
It helps clarify the relationship between design rules and lithography capabilities, including stepper selection (e.g., Nikon 5:1, Canon 2:1).
📋 Exposure Condition Table
| Step Name | Target Layer | CD Target | Equipment | Reduction Ratio | Wavelength | Notes |
|---|---|---|---|---|---|---|
| F-PH | STI Isolation | 0.28μm | Nikon NSR-S204B | 5:1 | KrF (248nm) | High-resolution required |
| NWL-PH | N-Well | >0.6μm | Canon FPA-3000i5+ | 2:1 | i-line (365nm) | CD resolution not critical |
| PWL-PH | P-Well | >0.6μm | Canon FPA-3000i5+ | 2:1 | i-line (365nm) | Same as above |
| NCD/PCD-PH | Channel Doping | ~0.6μm | Canon FPA-3000i5+ | 2:1 | i-line (365nm) | Electrical performance focus |
| PLY-PH | Poly Gate | 0.18μm | Nikon NSR-S306C | 5:1 | KrF (248nm) | Critical CD layer |
| NLD/PLD-PH | LDD (shallow) | 0.18μm | Nikon NSR-S306C | 5:1 | KrF (248nm) | Precise doping |
| NLD2/PLD2-PH | LDD (deep) | 0.22μm | Canon FPA-3000i5+ | 2:1 | i-line (365nm) | Sufficient with i-line |
| CNT-PH | Contact | 0.24μm | Nikon NSR-S204B | 5:1 | KrF (248nm) | Critical contact opening |
| ALA-PH | Metal-1 | 0.28μm | Nikon NSR-S204B | 5:1 | KrF (248nm) | Cell-level interconnect |
| HLA-PH | Via-1 | 0.24μm | Nikon NSR-S204B | 5:1 | KrF (248nm) | High via accuracy |
| ALB-PH | Metal-2 | 0.35μm | Canon FPA-3000i5+ | 2:1 | i-line (365nm) | Intermediate metal |
| HLB-PH | Via-2 | 0.28μm | Canon FPA-3000i5+ | 2:1 | i-line (365nm) | Via layer |
| ALC-PH | Metal-3 | 0.5μm | Canon FPA-3000i5+ | 2:1 | g-line (436nm) | Global interconnect |
| HLC-PH | Via-3 | 0.35μm | Canon FPA-3000i5+ | 2:1 | i-line (365nm) | Large via |
| ALD-PH | Pad Metal | 3.0μm | Canon FPA-3000i5+ | 2:1 | g-line (436nm) | Bonding pad |
| PAD-PH | Passivation | 3.0μm | Canon FPA-3000i5+ | 2:1 | g-line (436nm) | Final opening |
🔍 Notes
- Nikon NSR series (5:1): High-resolution steppers for fine patterns (e.g., Poly, Contact, Via).
- Canon FPA series (2:1): Bright-field, large-dimension support for Well, PAD, top metal.
- Wavelength Summary:
- KrF (248nm): For sub-0.25μm resolution.
- i-line (365nm): General-purpose, moderate resolution.
- g-line (436nm): Coarse features (Pad, Passivation).